红外光探测器件用II型超晶格的发展与研究现状(综述)

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摘要

研究了II型超晶格(T2SL)的主要性质。介绍了各种异质结类型及其实现的能量条件。本文介绍了基于InAs/GaSb、InAs/GaInSb和InAs/InAsSb的T2SLs的光学和电学特性的理论和实验研究结果。在定性分析和评价T2SL相对于红外光电子中使用的经典半导体化合物(HgCdTe、InSb和QWIP结构)特性的基础上,识别和描述了T2SL的优点和缺点。对基于InAs/GaSb、InAs/GaInSb和InAs/InAsSb的II型超晶格进行了比较,结果显示了T2SL在制造先进和有前途的红外光电探测器中的应用前景
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The current state of the development and research of type II superlattices for infrared photodetective devices (a review)
The main properties of type II superlattices (T2SL) are considered. The description of various heterojunction types and energy conditions of their realization is given. The results of theoretical and experimental studies of optical and electrical proper-ties of T2SLs based on InAs/GaSb, InAs/GaInSb and InAs/InAsSb are presented. Based on the results of qualitative analysis and evaluation of the characteristics of T2SL relative to classical semiconductor compounds used in infrared photoelectronics (HgCdTe, InSb and QWIP structures), the advantages and disad-vantages of T2SL are identified and described.A comparison of type II superlattices based on InAs/GaSb, InAs/GaInSb and InAs/InAsSb was carried out, the results of which showed the prospects of T2SL applications in the manufacturing state-of-art and promising infrared photodetectors
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