J. Chengzhou, Zhang Yanwen, Li Guohui, Wang Qi, Wang Wen-xun
{"title":"Si - gaas中MeV Si/sup +/植入物的活化","authors":"J. Chengzhou, Zhang Yanwen, Li Guohui, Wang Qi, Wang Wen-xun","doi":"10.1109/SIM.1992.752679","DOIUrl":null,"url":null,"abstract":"SI-GaAs wafers have been implanted with 0.6 /spl I.itilde/ 7.0 MeV /sup 28/ Si /sup +/ ions and processed by rapid thermal annealing. The donor activation rate goes down from 60% to /spl I.itilde/ 20% with an increasing fluence of 1 x 10/sup 13/ /spl I.itilde/ 2 x 10/sup 14/ cm/sup -2/, at high doses it goes up slowly with increasing ion energies. The carrier profile spreads shallower than Si atomic profile. The activation proceeds by the exchange of interstitial Si with substitutional Ga. The poor activation rate results mainly from Si/sub Ga/ - Si/sub As/ pair formation.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The activation of MeV Si/sup +/ implants in SI-GaAs\",\"authors\":\"J. Chengzhou, Zhang Yanwen, Li Guohui, Wang Qi, Wang Wen-xun\",\"doi\":\"10.1109/SIM.1992.752679\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SI-GaAs wafers have been implanted with 0.6 /spl I.itilde/ 7.0 MeV /sup 28/ Si /sup +/ ions and processed by rapid thermal annealing. The donor activation rate goes down from 60% to /spl I.itilde/ 20% with an increasing fluence of 1 x 10/sup 13/ /spl I.itilde/ 2 x 10/sup 14/ cm/sup -2/, at high doses it goes up slowly with increasing ion energies. The carrier profile spreads shallower than Si atomic profile. The activation proceeds by the exchange of interstitial Si with substitutional Ga. The poor activation rate results mainly from Si/sub Ga/ - Si/sub As/ pair formation.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752679\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752679","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The activation of MeV Si/sup +/ implants in SI-GaAs
SI-GaAs wafers have been implanted with 0.6 /spl I.itilde/ 7.0 MeV /sup 28/ Si /sup +/ ions and processed by rapid thermal annealing. The donor activation rate goes down from 60% to /spl I.itilde/ 20% with an increasing fluence of 1 x 10/sup 13/ /spl I.itilde/ 2 x 10/sup 14/ cm/sup -2/, at high doses it goes up slowly with increasing ion energies. The carrier profile spreads shallower than Si atomic profile. The activation proceeds by the exchange of interstitial Si with substitutional Ga. The poor activation rate results mainly from Si/sub Ga/ - Si/sub As/ pair formation.
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