CSTBT™(III)在高温条件下具有宽SOA

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI:10.1109/ISPSD.2011.5890808

Y. Fukada, Kenji Suzuki, Tetsuo Takahashi, Tatsuo Harada, Hidenori Fujii, S. Ishizawa, J. Yamashita, J. Donlon, T. Terashima

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引用次数: 3

摘要

本文介绍了CSTBT™(III)的高温性能及其主要参数。高温工作的关键是抑制寄生NPN晶体管的作用。N+发射极宽度、P+扩散层深度和栅极氧化层厚度是抑制寄生作用的主要参数。优化后的1200V CSTBT™(III)在200°C下成功工作，没有任何热失控或关断故障。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CSTBT™(III) having wide SOA under high temperature condition

This paper presents high temperature performance of CSTBT™ (III) and its main parameters. The key for high temperature operation is suppressing the parasitic NPN transistor action. N⁺ emitter width, P⁺ diffusion layer depth and gate oxide thickness are main parameters for suppressing the parasitic action. The optimized 1200V CSTBT™(III) succeeded in 200°C operation without any thermal runaway or turn-off failure.

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2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

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