短路条件下1.2kV IGBT栅电压振荡机理研究

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-01 DOI:10.1109/ISPSD.2018.8393713

Takuo Kikuchi, K. Nakamura, K. Takao

{"title":"短路条件下1.2kV IGBT栅电压振荡机理研究","authors":"Takuo Kikuchi, K. Nakamura, K. Takao","doi":"10.1109/ISPSD.2018.8393713","DOIUrl":null,"url":null,"abstract":"The mechanism of the gate oscillation under short circuit condition was studied by experiment and simulation. In the both ways, dependence of input DC-link voltage Vcc and stray inductance Le on the gate oscillation was examined to clarify the cause. It has been found that under short circuit a high electric field formed in the collector side and hole transit time delay plays a critical role for the onset of oscillation. Based on the model, its parametric dependence can be clearly interpreted. In addition, the design to suppress the oscillation has been discussed.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Investigation of the mechanism of gate voltage oscillation in 1.2kV IGBT under short circuit condition\",\"authors\":\"Takuo Kikuchi, K. Nakamura, K. Takao\",\"doi\":\"10.1109/ISPSD.2018.8393713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The mechanism of the gate oscillation under short circuit condition was studied by experiment and simulation. In the both ways, dependence of input DC-link voltage Vcc and stray inductance Le on the gate oscillation was examined to clarify the cause. It has been found that under short circuit a high electric field formed in the collector side and hole transit time delay plays a critical role for the onset of oscillation. Based on the model, its parametric dependence can be clearly interpreted. In addition, the design to suppress the oscillation has been discussed.\",\"PeriodicalId\":166809,\"journal\":{\"name\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2018.8393713\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

通过实验和仿真研究了短路条件下栅极振荡的机理。在这两种方法中，检查了输入直流链路电压Vcc和杂散电感Le对栅极振荡的依赖关系，以明确原因。研究发现，短路时集电极侧形成的强电场和空穴传输延时对振荡的发生起着关键作用。基于该模型，可以清楚地解释其参数依赖性。此外，还讨论了抑制振荡的设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Investigation of the mechanism of gate voltage oscillation in 1.2kV IGBT under short circuit condition

The mechanism of the gate oscillation under short circuit condition was studied by experiment and simulation. In the both ways, dependence of input DC-link voltage Vcc and stray inductance Le on the gate oscillation was examined to clarify the cause. It has been found that under short circuit a high electric field formed in the collector side and hole transit time delay plays a critical role for the onset of oscillation. Based on the model, its parametric dependence can be clearly interpreted. In addition, the design to suppress the oscillation has been discussed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

自引率

0.00%

发文量