超薄二氧化硅中热孔电流的模拟:击穿时间与热孔电流之间的关系

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871200

T. Ezaki, H. Nakasato, T. Yamamoto, M. Hane

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引用次数: 2

摘要

我们研究了注入二氧化硅的热孔电流与击穿时间(T/sub BD/)特性之间的关系。结合隧道电流模拟器和硅全带蒙特卡罗(FBMC)模拟器对热孔电流进行了计算。我们的研究结果表明，热孔电流似乎是氧化物降解和击穿的原因。此外，电子被放松到价带的附加冲击电离过程在低栅极电压区域的热空穴产生中起重要作用。

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Simulation of hot hole currents in ultra-thin silicon dioxides: the relationship between time to breakdown and hot hole currents

We have investigated the relationship between the currents of hot holes injected into silicon dioxides and the time to breakdown (T/sub BD/) characteristics. The hot hole currents were calculated by combining a tunnel current simulator and a silicon full-band Monte Carlo (FBMC) simulator. Our results show that the hot hole current seems to be responsible for oxide degradation and breakdown. Moreover, the additional impact ionization process where electrons are relaxed into the valence bands plays an important role in hot hole generation in the low-gate-voltage region.

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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