{"title":"用于高温超导热管理的石墨烯散热器","authors":"Wei-Min Tu, H. Tseng","doi":"10.23919/SNW.2017.8242322","DOIUrl":null,"url":null,"abstract":"Thermal-management design for power devices by placing the 2D graphene heat spreader (GHS) at the backside of collector-up heteroj unction bipolar transistors (HBTs) is presented. Temperature distribution in the GHS and the application of these spreaders to ameliorate thermal-coupling effects on multi-finger transistors were discussed. Compared to the npn device, the pnp device exhibits greater thermal-stability enhancement results, which are extraordinary and reproducible. Both numerical simulation and experimental measurement were achieved to scrutinize thermal performance of the GHS.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Graphene heat spreaders for thermal management of HBTs\",\"authors\":\"Wei-Min Tu, H. Tseng\",\"doi\":\"10.23919/SNW.2017.8242322\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermal-management design for power devices by placing the 2D graphene heat spreader (GHS) at the backside of collector-up heteroj unction bipolar transistors (HBTs) is presented. Temperature distribution in the GHS and the application of these spreaders to ameliorate thermal-coupling effects on multi-finger transistors were discussed. Compared to the npn device, the pnp device exhibits greater thermal-stability enhancement results, which are extraordinary and reproducible. Both numerical simulation and experimental measurement were achieved to scrutinize thermal performance of the GHS.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242322\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242322","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Graphene heat spreaders for thermal management of HBTs
Thermal-management design for power devices by placing the 2D graphene heat spreader (GHS) at the backside of collector-up heteroj unction bipolar transistors (HBTs) is presented. Temperature distribution in the GHS and the application of these spreaders to ameliorate thermal-coupling effects on multi-finger transistors were discussed. Compared to the npn device, the pnp device exhibits greater thermal-stability enhancement results, which are extraordinary and reproducible. Both numerical simulation and experimental measurement were achieved to scrutinize thermal performance of the GHS.
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