单电子晶体管的超高频特性

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI:10.1109/EDSSC.2018.8487153

H. Inokawa, T. Nishimura, Alka Singh, H. Satoh, Yasuo Takahashi

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引用次数: 3

摘要

基于时变主方程，仿真分析了单电子晶体管(SET)的高频整流特性。实验结果再次证实了远超CR时间常数设定的常规截止频率的运行，并阐明了这一现象背后的机理。结果强烈表明，在常规器件无法工作的超高频率下，SET将成为一个重要的整流器。

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Ultrahigh-Frequency Characteristics of Single-Electron Transistor

High-frequency rectifying characteristics of single-electron transistor (SET) is analyzed by simulation based on the time-dependent master equation. The experimental finding of the operation far beyond the conventional cutoff frequency set by the CR time constant is reconfirmed successfully, and the mechanism behind the phenomena is clarified. The result strongly suggests that SET becomes an important rectifier at ultrahigh frequencies where conventional devices cannot operate.

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来源期刊

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)

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