一个经过测试证明的用于预测使用偏差下NBTI的成年一代(A- g)模型

Z. Ji, J. F. Zhang, L. Lin, M. Duan, W. Zhang, X. Zhang, R. Gao, B. Kaczer, J. Franco, T. Schram, N. Horiguchi, S. De Gendt, G. Groeseneken
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引用次数: 11

摘要

我们首次证明了从短电压加速应力中提取的A-G模型可以预测低电压和动态电压下的长期直流和交流NBTI。这是通过成功地将非饱和缺陷与饱和缺陷分开来实现的,从而可以可靠地提取长期预测所需的功率指数。与R-D模型不同,A-G模型不需要求解AC NBTI的微分方程。这大大节省了计算时间,特别是对于需要小时间步长的高频,并使其易于在类似spice的模拟器中实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
For the first time, we demonstrate that A-G model extracted from short Vg-accelerated stresses can predict both long term DC and AC NBTI under low and dynamic operation Vg. This is achieved by successfully separating non-saturating defects from the saturating ones, allowing reliable extraction of power exponents needed for long term prediction. Unlike R-D model, A-G model does not require solving differential equations for AC NBTI. This saves computation time significantly, especially for high-frequency that needs small time-step, and makes it readily implementable in SPICE-like simulators.
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