接地布置对PZT薄膜电容器的影响

2007 Asia-Pacific Conference on Applied Electromagnetics Pub Date : 2007-12-01 DOI:10.1109/APACE.2007.4603975

S. Sulaiman, N. Lazim, R. A. Bakar, Z. Awang, A. Dollah

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引用次数: 2

摘要

本文报道了为改善单片微波集成电路(MMIC)薄膜电容器的高频性能，对其接地布置进行了新的研究。通过孔已蚀刻在PZT上，以创建接地接触。测量结果表明，与直接接触薄膜边缘暴露的Pt区域相比，电容器的响应有所改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of grounding arrangement on PZT thin film capacitor

This paper reports on a new investigation carried out on the grounding arrangement of monolithic microwave integrated circuit (MMIC) thin film capacitors to improve their high frequency behavior. Via holes have been etched on the PZT to create the ground contact. The measurement shows an improvement in the capacitor response compared to direct contact to the exposed Pt area at the film edge.

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2007 Asia-Pacific Conference on Applied Electromagnetics

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