B. Brar, G. Nagy, J. Bergman, G. Sullivan, P. Rowell, H. Lin, M. Dahlstrom, C. Kadow, M. Rodwell
{"title":"低漏InAs/AlSb hfet的RF和DC特性","authors":"B. Brar, G. Nagy, J. Bergman, G. Sullivan, P. Rowell, H. Lin, M. Dahlstrom, C. Kadow, M. Rodwell","doi":"10.1109/LECHPD.2002.1146781","DOIUrl":null,"url":null,"abstract":"InAs/AlSb HFETs with excellent RF and DC properties are reported. The drain currents are 750 mA/mm. with peak transconductance g/sub m/ of 1.1 S/mm. The gate leakage is below 1 nA//spl mu/m/sup 2/ for low gate bias. The threshold voltages of 0.25 /spl mu/m and 0.5 /spl mu/m gate-length devices are -2.5 and -1.5 V respectively, indicating short channel effects are present. Small-signal measurements on a 0.25 /spl mu/m gate-length device show f/sub /spl tau// of 120 GHz and f/sub max/ of 100 GHz at drain voltages below 0.4 V.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"RF and DC characteristics of low-leakage InAs/AlSb HFETs\",\"authors\":\"B. Brar, G. Nagy, J. Bergman, G. Sullivan, P. Rowell, H. Lin, M. Dahlstrom, C. Kadow, M. Rodwell\",\"doi\":\"10.1109/LECHPD.2002.1146781\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InAs/AlSb HFETs with excellent RF and DC properties are reported. The drain currents are 750 mA/mm. with peak transconductance g/sub m/ of 1.1 S/mm. The gate leakage is below 1 nA//spl mu/m/sup 2/ for low gate bias. The threshold voltages of 0.25 /spl mu/m and 0.5 /spl mu/m gate-length devices are -2.5 and -1.5 V respectively, indicating short channel effects are present. Small-signal measurements on a 0.25 /spl mu/m gate-length device show f/sub /spl tau// of 120 GHz and f/sub max/ of 100 GHz at drain voltages below 0.4 V.\",\"PeriodicalId\":137839,\"journal\":{\"name\":\"Proceedings. IEEE Lester Eastman Conference on High Performance Devices\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. IEEE Lester Eastman Conference on High Performance Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LECHPD.2002.1146781\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LECHPD.2002.1146781","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RF and DC characteristics of low-leakage InAs/AlSb HFETs
InAs/AlSb HFETs with excellent RF and DC properties are reported. The drain currents are 750 mA/mm. with peak transconductance g/sub m/ of 1.1 S/mm. The gate leakage is below 1 nA//spl mu/m/sup 2/ for low gate bias. The threshold voltages of 0.25 /spl mu/m and 0.5 /spl mu/m gate-length devices are -2.5 and -1.5 V respectively, indicating short channel effects are present. Small-signal measurements on a 0.25 /spl mu/m gate-length device show f/sub /spl tau// of 120 GHz and f/sub max/ of 100 GHz at drain voltages below 0.4 V.
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