MCM-C技术与MCM-D技术结合使用光敏聚合物

M. Topper, K. Scherpinski, R. Hahn, O. Ehrmann, H. Reichl, C. Schmaus, F. Bechtold
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引用次数: 2

摘要

将介绍陶瓷衬底技术与薄膜工艺的结合。厚膜杂化层用于底层,薄膜金属化层沉积在顶部,用于信号线的再分配。为了对该组合技术进行评价,制作了多层陶瓷衬底的测试样品。采用具有低介电常数的聚合物薄膜和薄膜铜制备高密度互连层。选择光敏聚合物是为了减少通孔形成的处理步骤。由于陶瓷衬底的平面化是高密度金属化最关键的问题,因此推荐使用光- bcb技术用于介质层。对于较厚的光- bcb薄膜,在TUB/Fraunhofer-IZM安装了一个槽显影工艺,其独特的特点是显影时间几乎与层厚度无关。通过热循环验证了衬底的可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Combination of MCM-C technology with MCM-D technology using photosensitive polymers
A combination of ceramic substrate technology with thin film processes will be presented. Thick film hybrids are used for the bottom layers and a thin film metallization layer is deposited on top for the redistribution of the signal lines. For the evaluation of this combined technology test samples of multilayer ceramic substrates were manufactured. Polymer films having a low dielectric constants and thin film copper were used to fabricate the high density interconnection layer. Photosensitive polymers were selected to reduce the number of processing steps for via formation. Photo-BCB is recommended for the dielectric layers because planarization of the ceramic substrate is the most critical issue for the high density metallization. For thicker photo-BCB films a tank development process was installed at TUB/Fraunhofer-IZM which has the unique feature that the development time is nearly independent of the layer thickness. The reliability of the substrates was proofed by thermal cycling.
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