{"title":"一个1v低功耗低噪声DTMOS的AB类放大器","authors":"H. F. Achigui, C. Fayomi, M. Sawan","doi":"10.1109/NEWCAS.2005.1496678","DOIUrl":null,"url":null,"abstract":"In this paper, the authors described a novel class AB opamp based on dynamic threshold voltage transistors (DTMOS) for low voltage (1-V), low power and low noise applications. The opamp is used to build the front-end receiver part of a near infrared spectroreflectometry (NIRS) device. The opamp has a two-stage configuration; DTMOS pseudo pMOS differential input pairs are used for input common-mode range enhancement, followed by a single ended class AB output. Experimental measurements from previous designs confirm the usage of a DTMOS device to build a 1-V opamp, using standard 0.18-/spl mu/m CMOS technology. The performed post-layout simulation results show an input referred noise of 107 nV//spl radic/Hz at 1 kHz, and a power consumption of 33.1 /spl mu/W under 5 pF and 10 k/spl Omega/ loads. The dc open loop gain is 60 dB, and a unity frequency of 2.73 MHz. The opamp has a CMRR of 100 dB, and input and output swings of 0.6 V and 0.8 V respectively.","PeriodicalId":131387,"journal":{"name":"The 3rd International IEEE-NEWCAS Conference, 2005.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A 1 V low-power low-noise DTMOS based class AB opamp\",\"authors\":\"H. F. Achigui, C. Fayomi, M. Sawan\",\"doi\":\"10.1109/NEWCAS.2005.1496678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the authors described a novel class AB opamp based on dynamic threshold voltage transistors (DTMOS) for low voltage (1-V), low power and low noise applications. The opamp is used to build the front-end receiver part of a near infrared spectroreflectometry (NIRS) device. The opamp has a two-stage configuration; DTMOS pseudo pMOS differential input pairs are used for input common-mode range enhancement, followed by a single ended class AB output. Experimental measurements from previous designs confirm the usage of a DTMOS device to build a 1-V opamp, using standard 0.18-/spl mu/m CMOS technology. The performed post-layout simulation results show an input referred noise of 107 nV//spl radic/Hz at 1 kHz, and a power consumption of 33.1 /spl mu/W under 5 pF and 10 k/spl Omega/ loads. The dc open loop gain is 60 dB, and a unity frequency of 2.73 MHz. The opamp has a CMRR of 100 dB, and input and output swings of 0.6 V and 0.8 V respectively.\",\"PeriodicalId\":131387,\"journal\":{\"name\":\"The 3rd International IEEE-NEWCAS Conference, 2005.\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 3rd International IEEE-NEWCAS Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEWCAS.2005.1496678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 3rd International IEEE-NEWCAS Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2005.1496678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1 V low-power low-noise DTMOS based class AB opamp
In this paper, the authors described a novel class AB opamp based on dynamic threshold voltage transistors (DTMOS) for low voltage (1-V), low power and low noise applications. The opamp is used to build the front-end receiver part of a near infrared spectroreflectometry (NIRS) device. The opamp has a two-stage configuration; DTMOS pseudo pMOS differential input pairs are used for input common-mode range enhancement, followed by a single ended class AB output. Experimental measurements from previous designs confirm the usage of a DTMOS device to build a 1-V opamp, using standard 0.18-/spl mu/m CMOS technology. The performed post-layout simulation results show an input referred noise of 107 nV//spl radic/Hz at 1 kHz, and a power consumption of 33.1 /spl mu/W under 5 pF and 10 k/spl Omega/ loads. The dc open loop gain is 60 dB, and a unity frequency of 2.73 MHz. The opamp has a CMRR of 100 dB, and input and output swings of 0.6 V and 0.8 V respectively.