一个1v低功耗低噪声DTMOS的AB类放大器

H. F. Achigui, C. Fayomi, M. Sawan
{"title":"一个1v低功耗低噪声DTMOS的AB类放大器","authors":"H. F. Achigui, C. Fayomi, M. Sawan","doi":"10.1109/NEWCAS.2005.1496678","DOIUrl":null,"url":null,"abstract":"In this paper, the authors described a novel class AB opamp based on dynamic threshold voltage transistors (DTMOS) for low voltage (1-V), low power and low noise applications. The opamp is used to build the front-end receiver part of a near infrared spectroreflectometry (NIRS) device. The opamp has a two-stage configuration; DTMOS pseudo pMOS differential input pairs are used for input common-mode range enhancement, followed by a single ended class AB output. Experimental measurements from previous designs confirm the usage of a DTMOS device to build a 1-V opamp, using standard 0.18-/spl mu/m CMOS technology. The performed post-layout simulation results show an input referred noise of 107 nV//spl radic/Hz at 1 kHz, and a power consumption of 33.1 /spl mu/W under 5 pF and 10 k/spl Omega/ loads. The dc open loop gain is 60 dB, and a unity frequency of 2.73 MHz. The opamp has a CMRR of 100 dB, and input and output swings of 0.6 V and 0.8 V respectively.","PeriodicalId":131387,"journal":{"name":"The 3rd International IEEE-NEWCAS Conference, 2005.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A 1 V low-power low-noise DTMOS based class AB opamp\",\"authors\":\"H. F. Achigui, C. Fayomi, M. Sawan\",\"doi\":\"10.1109/NEWCAS.2005.1496678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the authors described a novel class AB opamp based on dynamic threshold voltage transistors (DTMOS) for low voltage (1-V), low power and low noise applications. The opamp is used to build the front-end receiver part of a near infrared spectroreflectometry (NIRS) device. The opamp has a two-stage configuration; DTMOS pseudo pMOS differential input pairs are used for input common-mode range enhancement, followed by a single ended class AB output. Experimental measurements from previous designs confirm the usage of a DTMOS device to build a 1-V opamp, using standard 0.18-/spl mu/m CMOS technology. The performed post-layout simulation results show an input referred noise of 107 nV//spl radic/Hz at 1 kHz, and a power consumption of 33.1 /spl mu/W under 5 pF and 10 k/spl Omega/ loads. The dc open loop gain is 60 dB, and a unity frequency of 2.73 MHz. The opamp has a CMRR of 100 dB, and input and output swings of 0.6 V and 0.8 V respectively.\",\"PeriodicalId\":131387,\"journal\":{\"name\":\"The 3rd International IEEE-NEWCAS Conference, 2005.\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 3rd International IEEE-NEWCAS Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEWCAS.2005.1496678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 3rd International IEEE-NEWCAS Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2005.1496678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

摘要

在本文中,作者描述了一种基于动态阈值电压晶体管(DTMOS)的新型AB类运放,用于低电压(1-V)、低功耗和低噪声应用。该opamp用于构建近红外光谱反射计(NIRS)装置的前端接收器部分。opamp具有两级配置;DTMOS伪pMOS差分输入对用于输入共模范围增强,然后是单端AB类输出。先前设计的实验测量证实使用DTMOS器件构建1 v opamp,使用标准的0.18-/spl mu/m CMOS技术。布局后仿真结果表明,在1 kHz时,输入参考噪声为107 nV//spl径向/Hz,在5 pF和10 k/spl ω /负载下,功耗为33.1 /spl mu/W。直流开环增益为60db,单位频率为2.73 MHz。该运放的CMRR为100 dB,输入和输出摆幅分别为0.6 V和0.8 V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1 V low-power low-noise DTMOS based class AB opamp
In this paper, the authors described a novel class AB opamp based on dynamic threshold voltage transistors (DTMOS) for low voltage (1-V), low power and low noise applications. The opamp is used to build the front-end receiver part of a near infrared spectroreflectometry (NIRS) device. The opamp has a two-stage configuration; DTMOS pseudo pMOS differential input pairs are used for input common-mode range enhancement, followed by a single ended class AB output. Experimental measurements from previous designs confirm the usage of a DTMOS device to build a 1-V opamp, using standard 0.18-/spl mu/m CMOS technology. The performed post-layout simulation results show an input referred noise of 107 nV//spl radic/Hz at 1 kHz, and a power consumption of 33.1 /spl mu/W under 5 pF and 10 k/spl Omega/ loads. The dc open loop gain is 60 dB, and a unity frequency of 2.73 MHz. The opamp has a CMRR of 100 dB, and input and output swings of 0.6 V and 0.8 V respectively.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信