螺位错影响下HTRB条件下4H-SiC MOS界面寿命建模

2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI:10.1109/IRPS48203.2023.10117702

E. Brunt, D. Lichtenwalner, J. H. Park, S. Ganguly, J. McPherson

{"title":"螺位错影响下HTRB条件下4H-SiC MOS界面寿命建模","authors":"E. Brunt, D. Lichtenwalner, J. H. Park, S. Ganguly, J. McPherson","doi":"10.1109/IRPS48203.2023.10117702","DOIUrl":null,"url":null,"abstract":"This work explores the lifetime model and failure modes of the 4H-SiC MOS interface in the depletion mode. Unlike accumulation mode TDDB, shorter lifetime and a strong defect dependence are observed in the depletion mode. The 1/E model is found to be a good fit for the observed TDDB lifetime data. Despite having a shorter lifetime than accumulation mode, the modeled lifetimes are sufficient for application deployment.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations\",\"authors\":\"E. Brunt, D. Lichtenwalner, J. H. Park, S. Ganguly, J. McPherson\",\"doi\":\"10.1109/IRPS48203.2023.10117702\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work explores the lifetime model and failure modes of the 4H-SiC MOS interface in the depletion mode. Unlike accumulation mode TDDB, shorter lifetime and a strong defect dependence are observed in the depletion mode. The 1/E model is found to be a good fit for the observed TDDB lifetime data. Despite having a shorter lifetime than accumulation mode, the modeled lifetimes are sufficient for application deployment.\",\"PeriodicalId\":159030,\"journal\":{\"name\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS48203.2023.10117702\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10117702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本工作探讨了4H-SiC MOS界面在耗尽模式下的寿命模型和失效模式。与积累模式的TDDB不同，损耗模式的TDDB寿命较短，缺陷依赖性强。1/E模型可以很好地拟合观测到的TDDB寿命数据。尽管建模的生命周期比积累模式短，但对于应用程序部署来说，建模的生命周期是足够的。

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Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations

This work explores the lifetime model and failure modes of the 4H-SiC MOS interface in the depletion mode. Unlike accumulation mode TDDB, shorter lifetime and a strong defect dependence are observed in the depletion mode. The 1/E model is found to be a good fit for the observed TDDB lifetime data. Despite having a shorter lifetime than accumulation mode, the modeled lifetimes are sufficient for application deployment.

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2023 IEEE International Reliability Physics Symposium (IRPS)

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