三维集成电路中电容耦合故障TSV的非接触检测

I. Basith, R. Rashidzadeh, E. Abdel-Raheem
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引用次数: 2

摘要

采用通硅孔(TSV)的3D集成电路是下一代集成电路的一种有前途的技术。必须在测试阶段检测到制造TSV缺陷,如空隙和针孔,以确保ic无故障。本文提出了一种利用电容耦合的非接触探头。该方法消除了直接探测对TSV的影响,支持TSV探测的高密度和细间距要求。利用HFSS进行三维全波仿真,利用ADS进行电路级仿真,结果表明可以成功检测出TSV中常见的空洞、针孔等缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Contactless detection of faulty TSV in 3D IC via capacitive coupling
3D IC using Through Silicon Via (TSV) is a promising technology for next generation of integrated circuits. Manufacturing TSV defects like voids and pinholes have to be detected at the test phase to ensure fault free ICs. In this paper a contactless probe utilizing capacitive coupling is presented. The proposed method eliminates the impact of direct probing on TSV and supports the high-density and fine-pitch requirements for TSV probing. 3D full-wave simulations using HFSS and circuit level simulation using ADS show that common TSV defects such as voids and pinholes can be detected successfully.
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