0.25 /spl μ m双栅氧化CMOS工艺对无线多指mosfet闪烁噪声特性的影响

K. Chew, K. S. Yeo, S. Chu, Y.M. Wang
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引用次数: 0

摘要

对双栅氧化工艺和标准单栅氧化工艺制备的0.25 /spl mu/m薄栅CMOS晶体管的低频噪声性能进行了评价和比较。结果表明,采用双栅氧化工艺制备的薄栅晶体管在电流噪声谱上有一个数量级的降低。一般来说,制造的深亚微米mosfet的低频噪声行为最好用带有相关迁移率波动模型的数波动来描述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of 0.25 /spl mu/m dual gate oxide CMOS process on the flicker noise characteristics of multi-fingered MOSFETs for wireless applications
The low frequency noise performance of 0.25 /spl mu/m thin-gate CMOS transistors from the dual gate oxide process and the standard single gate oxide process are evaluated and compared. The results reveal that thin-gate transistors from the dual gate oxide process show an order reduction in the current noise spectra. In general, the low frequency noise behaviour of the fabricated deep-submicrometer MOSFETs is best described by the number fluctuations with correlated mobility fluctuations model.
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