{"title":"0.25 /spl μ m双栅氧化CMOS工艺对无线多指mosfet闪烁噪声特性的影响","authors":"K. Chew, K. S. Yeo, S. Chu, Y.M. Wang","doi":"10.1109/VTSA.2001.934524","DOIUrl":null,"url":null,"abstract":"The low frequency noise performance of 0.25 /spl mu/m thin-gate CMOS transistors from the dual gate oxide process and the standard single gate oxide process are evaluated and compared. The results reveal that thin-gate transistors from the dual gate oxide process show an order reduction in the current noise spectra. In general, the low frequency noise behaviour of the fabricated deep-submicrometer MOSFETs is best described by the number fluctuations with correlated mobility fluctuations model.","PeriodicalId":388391,"journal":{"name":"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)","volume":"175 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of 0.25 /spl mu/m dual gate oxide CMOS process on the flicker noise characteristics of multi-fingered MOSFETs for wireless applications\",\"authors\":\"K. Chew, K. S. Yeo, S. Chu, Y.M. Wang\",\"doi\":\"10.1109/VTSA.2001.934524\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The low frequency noise performance of 0.25 /spl mu/m thin-gate CMOS transistors from the dual gate oxide process and the standard single gate oxide process are evaluated and compared. The results reveal that thin-gate transistors from the dual gate oxide process show an order reduction in the current noise spectra. In general, the low frequency noise behaviour of the fabricated deep-submicrometer MOSFETs is best described by the number fluctuations with correlated mobility fluctuations model.\",\"PeriodicalId\":388391,\"journal\":{\"name\":\"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)\",\"volume\":\"175 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2001.934524\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2001.934524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of 0.25 /spl mu/m dual gate oxide CMOS process on the flicker noise characteristics of multi-fingered MOSFETs for wireless applications
The low frequency noise performance of 0.25 /spl mu/m thin-gate CMOS transistors from the dual gate oxide process and the standard single gate oxide process are evaluated and compared. The results reveal that thin-gate transistors from the dual gate oxide process show an order reduction in the current noise spectra. In general, the low frequency noise behaviour of the fabricated deep-submicrometer MOSFETs is best described by the number fluctuations with correlated mobility fluctuations model.