半导体器件的击穿电压模拟器

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991053

I. Omura, A. Nakagawa

{"title":"半导体器件的击穿电压模拟器","authors":"I. Omura, A. Nakagawa","doi":"10.1109/ISPSD.1990.991053","DOIUrl":null,"url":null,"abstract":"A breakdown voltage simulator TONADDEDB has been developed for use to design high voltage device structures. It solves only the Poisson equation, thus attains rapid calculation. TONADDEIIB adopts new solution algorithm so that it can be applicable to the devices with lightly doped floating potential regions , which are depleted for a high voltage. TONADDEIIB can also calculate punchthrough current without solving the currentcontinuity equations using a new method.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"392 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A breakdown voltage simulator for semiconductor devices TonaddeIIb\",\"authors\":\"I. Omura, A. Nakagawa\",\"doi\":\"10.1109/ISPSD.1990.991053\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A breakdown voltage simulator TONADDEDB has been developed for use to design high voltage device structures. It solves only the Poisson equation, thus attains rapid calculation. TONADDEIIB adopts new solution algorithm so that it can be applicable to the devices with lightly doped floating potential regions , which are depleted for a high voltage. TONADDEIIB can also calculate punchthrough current without solving the currentcontinuity equations using a new method.\",\"PeriodicalId\":162198,\"journal\":{\"name\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"volume\":\"392 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1990.991053\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

开发了一个击穿电压模拟器TONADDEDB，用于设计高压器件结构。它只求解泊松方程，从而实现快速计算。TONADDEIIB采用了新的求解算法，因此它可以适用于具有轻掺杂的浮动电位区域的器件，该浮动电位区域因高电压而耗尽。TONADDEIIB还可以在不求解电流连续性方程的情况下，使用一种新的方法计算穿通电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A breakdown voltage simulator for semiconductor devices TonaddeIIb

A breakdown voltage simulator TONADDEDB has been developed for use to design high voltage device structures. It solves only the Poisson equation, thus attains rapid calculation. TONADDEIIB adopts new solution algorithm so that it can be applicable to the devices with lightly doped floating potential regions , which are depleted for a high voltage. TONADDEIIB can also calculate punchthrough current without solving the currentcontinuity equations using a new method.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

自引率

0.00%

发文量