130 nm SiGe BiCMOS技术FMCW雷达Ka波段数字控制振荡器

2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES) Pub Date : 2018-06-01 DOI:10.23919/MIXDES.2018.8436691

Igor Butryn, Lukasz Wiechowski, Daniel Pietron, W. Pleskacz

{"title":"130 nm SiGe BiCMOS技术FMCW雷达Ka波段数字控制振荡器","authors":"Igor Butryn, Lukasz Wiechowski, Daniel Pietron, W. Pleskacz","doi":"10.23919/MIXDES.2018.8436691","DOIUrl":null,"url":null,"abstract":"The paper presents a Digitally Controlled Oscillator (DCO) for a FMCW radar transceiver designed in IHP 130 nm BiCMOS SiGe technology. The circuit consist of a differential pair of heterojunction bipolar transistors (HBT), a capacitor bank and an inductor that are designed in HFSS Ansys software to improve the quality factor and decrease inductance. The presented oscillator provides a wide tuning range from 29 GHz to 40.5 GHz. The DCO is supplied from 1.8 V and dissipates 18 mW. The phase noise of the presented oscillator is equal to −91 dbc/Hz at 1 MHz from carrier frequency.","PeriodicalId":349007,"journal":{"name":"2018 25th International Conference \"Mixed Design of Integrated Circuits and System\" (MIXDES)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ka Band Digitally Controlled Oscillator for FMCW Radar in 130 nm SiGe BiCMOS Technology\",\"authors\":\"Igor Butryn, Lukasz Wiechowski, Daniel Pietron, W. Pleskacz\",\"doi\":\"10.23919/MIXDES.2018.8436691\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a Digitally Controlled Oscillator (DCO) for a FMCW radar transceiver designed in IHP 130 nm BiCMOS SiGe technology. The circuit consist of a differential pair of heterojunction bipolar transistors (HBT), a capacitor bank and an inductor that are designed in HFSS Ansys software to improve the quality factor and decrease inductance. The presented oscillator provides a wide tuning range from 29 GHz to 40.5 GHz. The DCO is supplied from 1.8 V and dissipates 18 mW. The phase noise of the presented oscillator is equal to −91 dbc/Hz at 1 MHz from carrier frequency.\",\"PeriodicalId\":349007,\"journal\":{\"name\":\"2018 25th International Conference \\\"Mixed Design of Integrated Circuits and System\\\" (MIXDES)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 25th International Conference \\\"Mixed Design of Integrated Circuits and System\\\" (MIXDES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MIXDES.2018.8436691\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Conference \"Mixed Design of Integrated Circuits and System\" (MIXDES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIXDES.2018.8436691","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了一种基于IHP 130 nm BiCMOS SiGe技术的FMCW雷达收发器的数字控制振荡器(DCO)。该电路由差动异质结双极晶体管(HBT)、电容组和电感组成，采用HFSS Ansys软件设计，提高了质量因数，减小了电感。所提出的振荡器提供从29 GHz到40.5 GHz的宽调谐范围。DCO由1.8 V供电，功耗为18mw。在载波频率为1mhz时，所述振荡器的相位噪声为- 91 dbc/Hz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Ka Band Digitally Controlled Oscillator for FMCW Radar in 130 nm SiGe BiCMOS Technology

The paper presents a Digitally Controlled Oscillator (DCO) for a FMCW radar transceiver designed in IHP 130 nm BiCMOS SiGe technology. The circuit consist of a differential pair of heterojunction bipolar transistors (HBT), a capacitor bank and an inductor that are designed in HFSS Ansys software to improve the quality factor and decrease inductance. The presented oscillator provides a wide tuning range from 29 GHz to 40.5 GHz. The DCO is supplied from 1.8 V and dissipates 18 mW. The phase noise of the presented oscillator is equal to −91 dbc/Hz at 1 MHz from carrier frequency.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES)

自引率

0.00%

发文量