热载流子和软击穿效应导致pMOS晶体管射频性能下降

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398231

Yi Liu, A. Sadat, Chuanzhao Yu, J. Yuan

{"title":"热载流子和软击穿效应导致pMOS晶体管射频性能下降","authors":"Yi Liu, A. Sadat, Chuanzhao Yu, J. Yuan","doi":"10.1109/SMIC.2004.1398231","DOIUrl":null,"url":null,"abstract":"Hot carrier and soft breakdown stress on pMOS RF devices has been examined. The cut-off frequency and the S-parameters degrade with stress. The measured threshold voltage shifts negatively and mobility decreases after stress. It is our understanding that this is the first attempt to investigate hot carrier and soft breakdown effects on RF performance of pMOS transistors and first reporting of negative shift in threshold voltage.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"RF performance degradation in pMOS transistors due to hot carrier and soft breakdown effects\",\"authors\":\"Yi Liu, A. Sadat, Chuanzhao Yu, J. Yuan\",\"doi\":\"10.1109/SMIC.2004.1398231\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot carrier and soft breakdown stress on pMOS RF devices has been examined. The cut-off frequency and the S-parameters degrade with stress. The measured threshold voltage shifts negatively and mobility decreases after stress. It is our understanding that this is the first attempt to investigate hot carrier and soft breakdown effects on RF performance of pMOS transistors and first reporting of negative shift in threshold voltage.\",\"PeriodicalId\":288561,\"journal\":{\"name\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2004.1398231\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398231","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了pMOS射频器件的热载流子应力和软击穿应力。截止频率和s参数随应力减小而减小。应力作用后，测量到的阈值电压负移，迁移率下降。据我们了解，这是首次尝试研究热载流子和软击穿对pMOS晶体管射频性能的影响，并首次报道阈值电压的负移位。

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RF performance degradation in pMOS transistors due to hot carrier and soft breakdown effects

Hot carrier and soft breakdown stress on pMOS RF devices has been examined. The cut-off frequency and the S-parameters degrade with stress. The measured threshold voltage shifts negatively and mobility decreases after stress. It is our understanding that this is the first attempt to investigate hot carrier and soft breakdown effects on RF performance of pMOS transistors and first reporting of negative shift in threshold voltage.

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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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