界面状态对HEMT直流输出特性的影响

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785977

Xinghong Zhang, G. Xia, Yuansen Xu, Yufen Yang, Zhanguo Wang

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引用次数: 0

摘要

本文首次利用高电子迁移率晶体管(HEMT)直流输出分析模型，定量分析了界面态对AlGaAs/GaAs高电子迁移率晶体管(HEMT)直流输出特性的影响。考虑到AlGaAs/GaAs异质结构中界面态的作用，我们详细分析了界面态对HEMT的I-V特性和跨导的影响。计算结果表明，栅极电压对通道电流的控制能力随着界面态密度的增加而降低，器件的跨导减小。因此，界面状态的存在降低了HEMT的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The influence of interface states on the characteristics of HEMT DC output

The influence of interface states on the characteristics of AlGaAs/GaAs high electron mobility transistor (HEMT) direct current (DC) output has been quantitatively analyzed in the first time using an analytical model of HEMT DC output. Considering the action of the interface states in a AlGaAs/GaAs heterostructure, we have analyzed in detail the effect of interface states on I-V characteristics and transconductance of HEMT. Our calculated results show that the control capability of the gate voltage on the channel current reduces with increasing density of interface states, the transconductance of device decreases. Hence, the existence of the interface states degrades the performance of HEMT.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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