用于3D-IC模对模时钟同步的全数字延迟锁定环路

Ching-Che Chung, Chi-Yu Hou
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引用次数: 8

摘要

本文提出了一种基于硅通孔(tsv)的3d集成电路模对模时钟同步全数字延迟锁相环(ADDLL)。所提出的ADDLL可以容忍tsv的延迟变化,并同步给定3D-IC的多层时钟信号。首先,在系统复位后,采用由数字控制变容器(dcv)组成的两条高分辨率延迟线来补偿tsv中的延迟变化。随后,所提出的ADDLL可以进一步补偿3d集成电路多层时钟信号的时钟倾斜。ADDLL被锁定后,消除了时钟偏差或相位误差,并且可以在芯片之间同步进行数据传输。所提出的设计可以在300MHz到1GHz范围内工作。所提出的ADDLL在标准性能的90nm CMOS工艺中实现,每个芯片的ADDLL面积为0.045mm2。在1GHz时,所提出的ADDLL的功耗为3.27mW,给定3D-IC多层时钟信号的最大相位误差为21.9ps。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
All-digital delay-locked loop for 3D-IC die-to-die clock synchronization
In this paper, an all-digital delay-locked loop (ADDLL) for 3D-IC die-to-die clock synchronization with through silicon vias (TSVs) is presented. The proposed ADDLL can tolerate delay variations in TSVs and synchronize the clock signals in multiple layers of a given 3D-IC. Firstly, after system is reset, the proposed ADDLL uses two high resolution delay lines which composed of digital controlled varactors (DCVs) to compensate for the delay variations in TSVs. Subsequently, the proposed ADDLL can further compensate for the clock skew of clock signals in multiple layers of a 3D-IC. After ADDLL is locked, the clock skew or phase error is eliminated, and data transfer between dies can be performed synchronously. The proposed design can operate from 300MHz to 1GHz. The proposed ADDLL is implemented in a standard performance 90nm CMOS process, and the area of the ADDLL per die is 0.045mm2. The power consumption of the proposed ADDLL is 3.27mW at 1GHz, and the maximum phase error of clock signals in multiple layers of a given 3D-IC is 21.9ps.
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