在光子集成电路的光波导层上生长GaInAs/ alinas - hemt

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492026

W. Schlaak, W. Passenberg, C. Schramm, G. Mekonnen, A. Umbach, W. Ebert, H. Bach

{"title":"在光子集成电路的光波导层上生长GaInAs/ alinas - hemt","authors":"W. Schlaak, W. Passenberg, C. Schramm, G. Mekonnen, A. Umbach, W. Ebert, H. Bach","doi":"10.1109/ICIPRM.1996.492026","DOIUrl":null,"url":null,"abstract":"For optical networks in the 40 Gbit/s regime as well as in fiber-fed cellular microwave mobile communication systems high-speed optical receivers with high sensitivity are required. This work describes the development of GaInAs-AlInAs high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on metal-organic vapour phase epitaxy (MOVPE) layers. These devices are to be used in low-noise amplifier circuits as part of an optical receiver.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuits\",\"authors\":\"W. Schlaak, W. Passenberg, C. Schramm, G. Mekonnen, A. Umbach, W. Ebert, H. Bach\",\"doi\":\"10.1109/ICIPRM.1996.492026\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For optical networks in the 40 Gbit/s regime as well as in fiber-fed cellular microwave mobile communication systems high-speed optical receivers with high sensitivity are required. This work describes the development of GaInAs-AlInAs high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on metal-organic vapour phase epitaxy (MOVPE) layers. These devices are to be used in low-noise amplifier circuits as part of an optical receiver.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492026\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

对于40gbit /s速率的光网络以及光纤馈入蜂窝微波移动通信系统，需要高灵敏度的高速光接收机。本文描述了在金属-有机气相外延(MOVPE)层上通过分子束外延(MBE)生长的GaInAs-AlInAs高电子迁移率晶体管(hemt)的发展。这些设备用于低噪声放大器电路作为光接收机的一部分。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuits

For optical networks in the 40 Gbit/s regime as well as in fiber-fed cellular microwave mobile communication systems high-speed optical receivers with high sensitivity are required. This work describes the development of GaInAs-AlInAs high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on metal-organic vapour phase epitaxy (MOVPE) layers. These devices are to be used in low-noise amplifier circuits as part of an optical receiver.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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