1 kV/1.3 mΩ·cm2垂直GaN-on-GaN肖特基势垒二极管，具有高开关性能

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI:10.1109/ISPSD.2018.8393655

Shu Yang, Shaowen Han, Rui Li, Kuang Sheng

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引用次数: 14

摘要

在本文中，我们提出了在大块GaN衬底上实现的垂直GaN肖特基势垒二极管，提供约1 kV的击穿电压，考虑电流扩展的比导通电阻为1.3 mΩ·cm2，高电流摆幅超过13个数量级，低理想因数为1.04。所开发的器件在400 V/500 ns开关条件下具有无电流坍缩的特性，并且具有零反向恢复特性，在大功率和高频应用中具有很大的潜力。

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1 kV/1.3 mΩ·cm2 vertical GaN-on-GaN Schottky barrier diodes with high switching performance

In this paper, we present vertical GaN Schottky barrier diodes implemented on bulk GaN substrates, delivering a breakdown voltage of ∼1 kV, a specific ON-resistance of 1.3 mΩ·cm2 with current spreading considered, a high current swing over 13 orders of magnitude and a low ideality factor of 1.04. The developed devices exhibit current-collapse-free operation under 400 V/500 ns switching condition as well as zero reverse recovery characteristics, showing great potential for high-power and high-frequency applications.

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来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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