MOS控制二极管(MCD)的实验演示

APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058) Pub Date : 2000-02-06 DOI:10.1109/APEC.2000.822831

Z. Xu, B. Zhang, A.Q. Huang

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引用次数: 10

摘要

MOS控制二极管(MCD)是一类能达到理想二极管性能的新型功率半导体二极管。在本文中，通过使用商用功率mosfet作为MCD，首次提出了MCD概念的实验验证。测量了这些mcd的反向恢复电流和反向恢复电荷，并与mosfet的主体二极管进行了比较。这些测量表明，这些mcd可以显著降低反向恢复电流，存储电荷和开关损耗。在数值模拟的基础上，预测了在1.2 kV、2.4 kV和4.5 kV下优化后的MCD性能。一旦开发出优化的MCD，就可以获得接近器件仿真预测的理想性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Experimental demonstration of the MOS controlled diode (MCD)

The MOS controlled diode (MCD) is a new class of power semiconductor diode that can achieve ideal diode performance. In this paper, experimental verification of the MCD concept is presented for the first time by using commercially available power MOSFETs operating as MCDs. Measurements of the reverse recovery currents and reverse recovery charges of these MCDs are obtained and compared with the body diodes of the MOSFETs. These measurements show that these MCDs can significantly reduce the reverse recovery current, storage charge and switching loss. Optimized MCD performances at 1.2 kV, 2.4 kV and 4.5 kV are also projected based on numerical simulations. Ideal performance of the MCD close to that predicted by device simulation should be obtained once an optimized MCD is developed.

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来源期刊

APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058)

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