A. Schuppen, M. Tortschanoff, J. Berntgen, P. Maier, D. Zerrweck, H. von der Ropp, J. Tolonics, K. Burger
{"title":"硅锗的扩散","authors":"A. Schuppen, M. Tortschanoff, J. Berntgen, P. Maier, D. Zerrweck, H. von der Ropp, J. Tolonics, K. Burger","doi":"10.1109/ESSDERC.2000.194723","DOIUrl":null,"url":null,"abstract":"SiGe has already penetrated into the III/V market by rf IC ́s in the 0.9-2.4 GHz range. SiGe technologies have a high reliability, operates also at low voltages and nevertheless it reveals 72% PAE @ GSM frequency, 60% PAE for a 3W DCS power HBT and 50% PAE for CDMA at 1.9GHz. Combined with flip chip technology TEMIC ́s SiGe1 process is well suited for rf power systems up to 6 GHz. For higher frequencies and due to performance pressure of pure Si from the bottom of the frequency scale and III/V devices from the top, the next generation: SiGe2 proliferates into III/V area in the 720 GHz range. SiGe2 technology includes three types of transistors on the same wafer, having 25, 40 and 70 GHz transit frequencies with 7, 4 and 2.5V BVCE0 corresponding breakdown voltages.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"106 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"The Proliferation of Silicon Germanium\",\"authors\":\"A. Schuppen, M. Tortschanoff, J. Berntgen, P. Maier, D. Zerrweck, H. von der Ropp, J. Tolonics, K. Burger\",\"doi\":\"10.1109/ESSDERC.2000.194723\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiGe has already penetrated into the III/V market by rf IC ́s in the 0.9-2.4 GHz range. SiGe technologies have a high reliability, operates also at low voltages and nevertheless it reveals 72% PAE @ GSM frequency, 60% PAE for a 3W DCS power HBT and 50% PAE for CDMA at 1.9GHz. Combined with flip chip technology TEMIC ́s SiGe1 process is well suited for rf power systems up to 6 GHz. For higher frequencies and due to performance pressure of pure Si from the bottom of the frequency scale and III/V devices from the top, the next generation: SiGe2 proliferates into III/V area in the 720 GHz range. SiGe2 technology includes three types of transistors on the same wafer, having 25, 40 and 70 GHz transit frequencies with 7, 4 and 2.5V BVCE0 corresponding breakdown voltages.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"106 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194723\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SiGe has already penetrated into the III/V market by rf IC ́s in the 0.9-2.4 GHz range. SiGe technologies have a high reliability, operates also at low voltages and nevertheless it reveals 72% PAE @ GSM frequency, 60% PAE for a 3W DCS power HBT and 50% PAE for CDMA at 1.9GHz. Combined with flip chip technology TEMIC ́s SiGe1 process is well suited for rf power systems up to 6 GHz. For higher frequencies and due to performance pressure of pure Si from the bottom of the frequency scale and III/V devices from the top, the next generation: SiGe2 proliferates into III/V area in the 720 GHz range. SiGe2 technology includes three types of transistors on the same wafer, having 25, 40 and 70 GHz transit frequencies with 7, 4 and 2.5V BVCE0 corresponding breakdown voltages.
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