S. De, M. Baig, Bo-Han Qiu, D. Lu, P. Sung, F. Hsueh, Yao-Jen Lee, C. Su
{"title":"室温和233K下神经网络在线训练的三栅极铁电场效应晶体管表征和建模","authors":"S. De, M. Baig, Bo-Han Qiu, D. Lu, P. Sung, F. Hsueh, Yao-Jen Lee, C. Su","doi":"10.1109/DRC50226.2020.9135186","DOIUrl":null,"url":null,"abstract":"This paper reports detailed analysis on switching dynamics and device variability over a wide range of temperatures for deeply scaled (40nm gate length) tri-gate ferroelectric FETs with 10nm HZO fabricated using gate first process on SOI wafers. Our experimental results manifest, 99% ferroelectric switching at room temperature and at 233K. A memory window over 5V and strong gate length dependence of memory window is observed. Highly linear and symmetric multilevel switching characteristics makes our ferroelectric FETs suitable for neuromorphic applications, as demonstrated with neural network online training simulations.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K\",\"authors\":\"S. De, M. Baig, Bo-Han Qiu, D. Lu, P. Sung, F. Hsueh, Yao-Jen Lee, C. Su\",\"doi\":\"10.1109/DRC50226.2020.9135186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports detailed analysis on switching dynamics and device variability over a wide range of temperatures for deeply scaled (40nm gate length) tri-gate ferroelectric FETs with 10nm HZO fabricated using gate first process on SOI wafers. Our experimental results manifest, 99% ferroelectric switching at room temperature and at 233K. A memory window over 5V and strong gate length dependence of memory window is observed. Highly linear and symmetric multilevel switching characteristics makes our ferroelectric FETs suitable for neuromorphic applications, as demonstrated with neural network online training simulations.\",\"PeriodicalId\":397182,\"journal\":{\"name\":\"2020 Device Research Conference (DRC)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 Device Research Conference (DRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC50226.2020.9135186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Device Research Conference (DRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC50226.2020.9135186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K
This paper reports detailed analysis on switching dynamics and device variability over a wide range of temperatures for deeply scaled (40nm gate length) tri-gate ferroelectric FETs with 10nm HZO fabricated using gate first process on SOI wafers. Our experimental results manifest, 99% ferroelectric switching at room temperature and at 233K. A memory window over 5V and strong gate length dependence of memory window is observed. Highly linear and symmetric multilevel switching characteristics makes our ferroelectric FETs suitable for neuromorphic applications, as demonstrated with neural network online training simulations.
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