一维纳米结构晶体管的磁阻表征方法研究

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Pub Date : 2018-05-03 DOI:10.1109/ULIS.2018.8354750

G. Umana-Membreno, N. Akhavan, J. Antoszewski, L. Faraone, S. Cristoloveanu

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引用次数: 1

摘要

提出了一种新的类id纳米晶体管结构的磁阻表征方法。提出的方法基于物理磁阻效应(PMR)，利用了载流子具有非离散速度分布的现实，即使只有单一载流子存在。

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Towards a magnetoresistance characterization methodology for 1D nanostructured transistors

A novel approach to magnetoresistance characterization of ID-like nanoscaled transistor structures is presented. The proposed approach, which is based on the physical magnetoresistance effect (PMR), exploits the reality that carriers have non-discrete velocity distributions even when only a single carrier species is present.

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2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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