生产线后端化学机械抛光过程的集成晶圆和模具级仿真

Ushasree Katakamsetty, Stefan Nikolaev Voykov, B. Vasilev, S. Nakagawa, T. Tugbawa, Jansen Chee, A. Gower-Hall, Brian Lee, Weiyang Zhu, Bifeng Li, Kimiko Ichikawa
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引用次数: 0

摘要

模具的化学机械抛光(CMP)变化是模具在晶圆上的位置的函数[1]。因此,在给定晶圆上,CMP热点的数量和热点位置可能因芯片而异。在本文中,我们证明了Cadence的集成晶圆和晶圆级CMP模型在预测跨产品芯片晶圆的多个晶圆上的CMP变化方面的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integrated Wafer and Die Level Simulation of Back End of Line Chemical Mechanical Polishing Processes
The Chemical Mechanical Polishing (CMP) variation on a die is a function of the die's location on the wafer [1]. Consequently, the number of CMP hotspots and the hotspot locations can vary from die-to-die on a given wafer. In this paper, we demonstrate the accuracy of Cadence's integrated wafer and die level CMP model in predicting the CMP variation on multiple dies across product chip wafers.
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