集成电路中单事件瞬态脉冲的展宽和衰减效应建模

2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI:10.1109/RADECS.2008.5782710

I. Ribeiro, G. Wirth, F. Kastensmidt

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引用次数: 1

摘要

我们比较了从激光测试中得到的瞬态脉冲传播行为和电子模拟，并提出了一个考虑集成电路中SET展宽和退化的分析模型。

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Modeling the effects of broadening and degradation of single event transient pulses in integrated circuits

We compare the behavior of transient pulse propagation from laser testing presented in with electrical simulations, and present an analytical model that considers SET broadening and degradation in integrated circuits.

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2008 European Conference on Radiation and Its Effects on Components and Systems

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