900MHz/1800MHz GSM基站LNA，噪声系数低于1db, OIP3 +36dBm

2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI:10.1109/RFIC.2010.5477321

D. Leenaerts, J. Bergervoet, J. Lobeek, M. Schmidt-Szalowski

{"title":"900MHz/1800MHz GSM基站LNA，噪声系数低于1db, OIP3 +36dBm","authors":"D. Leenaerts, J. Bergervoet, J. Lobeek, M. Schmidt-Szalowski","doi":"10.1109/RFIC.2010.5477321","DOIUrl":null,"url":null,"abstract":"A sub-1dB NF fully integrated low noise amplifier in a 0.25µm SiGe∶C BiCMOS technology targeting GSM base-station applications will be discussed. The two-stage LNA is housed in a HVSON10 package and mounted on a PCB. The LNA measures a NF of 0.75dB in the 900MHz band and 0.9dB in the 1800MHz band. The LNA is matched to 50Ω at the RF I/O pins of the IC and has integrated ESD protection on all IC pins. The LNA achieves an OIP3 of +36dBm, a 1-dB OCP of +19dBm while dissipating 190mW. The LNA performance is in line with the compound technology LNA counterparts.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3\",\"authors\":\"D. Leenaerts, J. Bergervoet, J. Lobeek, M. Schmidt-Szalowski\",\"doi\":\"10.1109/RFIC.2010.5477321\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A sub-1dB NF fully integrated low noise amplifier in a 0.25µm SiGe∶C BiCMOS technology targeting GSM base-station applications will be discussed. The two-stage LNA is housed in a HVSON10 package and mounted on a PCB. The LNA measures a NF of 0.75dB in the 900MHz band and 0.9dB in the 1800MHz band. The LNA is matched to 50Ω at the RF I/O pins of the IC and has integrated ESD protection on all IC pins. The LNA achieves an OIP3 of +36dBm, a 1-dB OCP of +19dBm while dissipating 190mW. The LNA performance is in line with the compound technology LNA counterparts.\",\"PeriodicalId\":269027,\"journal\":{\"name\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2010.5477321\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

针对GSM基站应用，将讨论0.25µm SiGe∶C BiCMOS技术的sub-1dB NF全集成低噪声放大器。两级LNA封装在HVSON10封装中并安装在PCB上。LNA在900MHz频段的NF值为0.75dB，在1800MHz频段的NF值为0.9dB。LNA与IC的RF I/O引脚50Ω匹配，并在所有IC引脚上集成ESD保护。LNA的OIP3为+36dBm, OCP为+19dBm，功耗为190mW。该LNA性能符合同类复合技术LNA。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3

A sub-1dB NF fully integrated low noise amplifier in a 0.25µm SiGe∶C BiCMOS technology targeting GSM base-station applications will be discussed. The two-stage LNA is housed in a HVSON10 package and mounted on a PCB. The LNA measures a NF of 0.75dB in the 900MHz band and 0.9dB in the 1800MHz band. The LNA is matched to 50Ω at the RF I/O pins of the IC and has integrated ESD protection on all IC pins. The LNA achieves an OIP3 of +36dBm, a 1-dB OCP of +19dBm while dissipating 190mW. The LNA performance is in line with the compound technology LNA counterparts.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 IEEE Radio Frequency Integrated Circuits Symposium

自引率

0.00%

发文量