多层集成电路封装电源噪声研究:全波仿真与模型验证

A. Scogna, C. Ritota
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引用次数: 2

摘要

本文研究了多层集成电路封装中的电源噪声,并分析了短路过孔对电源噪声的影响。采用基于有限积分技术(FIT)的全波程序进行了数值模拟,并通过实测进行了验证。此外,采用时域和频域两种不同的求解方法验证了所提模型的准确性。本文讨论了一些结果:1)使用短通孔可以实现50%以上的噪声抑制,2)缓解水平与短通孔与信号通孔的距离有关。采用散射参数(S-parameters)和时域反射(TDR)方法研究了信号从顶层传播到底层时的完整性。特别地,我们发现在短路过孔更近的情况下,模型的TDR会导致更大的阻抗变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power supply noise investigation of a multilayered IC package: full wave simulation and model validation
The present paper investigates the power supply noise in multilayered IC packages and analyzes the effect of shorting vias. A full wave code, based on the Finite Integration Technique (FIT), is used for the numerical simulations and it is validated by means of measurements. Furthermore two different solvers are employed to verify the accuracy of the proposed model: time domain and frequency domain. Some results are addressed: 1) the use of shorting vias allows achieving more than 50% noise suppression and 2) the mitigation level is related to the distance of the shorting vias from the signal via. The signal integrity on a signal propagating from the top layer to the bottom layer of the considered IC package is studied by means of Scattering parameters (S-parameters) and time domain reflectometry (TDR). In particular it is found that the TDR evaluated for the model with closer shorting vias results in a larger impedance variation.
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