非晶态HfO2 ReRAM细胞的光子发射显微镜研究

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI:10.1109/IPFA55383.2022.9915718

F. Stellari, L. Ocola, E. Wu, T. Ando, P. Song

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引用次数: 1

摘要

在本文中，我们研究了非晶HfO2电阻随机存取存储器(ReRAM)电池中形成的细丝的光子发射，并将其与先前晶体电池的结果进行了比较。利用CCD和InGaAs相机在正/反向偏置电压下观察光子在设置/复位状态下的发射情况。电场模型和均匀泊松空间分布模型可以用来模拟两种类型细胞上的光子发射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photon Emission Microscopy of Amorphous HfO2 ReRAM Cells

In this paper, we study the photon emission from filaments formed in amorphous HfO2 Resistive Random-Access Memory (ReRAM) cells and compare it to previous results from crystalline cells. Both a CCD and an InGaAs camera are used to observe the photon emission in set/reset state using forward/reverse bias voltage. An electric field model and a uniform Poisson spatial distribution model can be used to model the photon emission on both types of cell types.

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来源期刊

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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