A. Ali, H. Madan, A. Kirk, R. Wallace, D. Zhao, D. Mourey, M. Hudait, T. Jackson, B. R. Bennett, J. B. Boos, S. Datta
{"title":"等离子体增强Al2O3电介质对GaSb(100)的费米能级解钉","authors":"A. Ali, H. Madan, A. Kirk, R. Wallace, D. Zhao, D. Mourey, M. Hudait, T. Jackson, B. R. Bennett, J. B. Boos, S. Datta","doi":"10.1109/DRC.2010.5551954","DOIUrl":null,"url":null,"abstract":"This paper discusses arsenic-antimonide based MOS-HEMTs which have great potential to enable complementary logic operation at low supply voltage. The effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectrics studied in this paper. This paper also proposed for the first time unpinned Fermi level in GaSb MOS system with high-κ PEALD Al2O3 dielectric using admittance spectroscopy and XPS analysis.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Fermi level unpinning of GaSb(100) using Plasma Enhanced ALD Al2O3 dielectric\",\"authors\":\"A. Ali, H. Madan, A. Kirk, R. Wallace, D. Zhao, D. Mourey, M. Hudait, T. Jackson, B. R. Bennett, J. B. Boos, S. Datta\",\"doi\":\"10.1109/DRC.2010.5551954\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses arsenic-antimonide based MOS-HEMTs which have great potential to enable complementary logic operation at low supply voltage. The effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectrics studied in this paper. This paper also proposed for the first time unpinned Fermi level in GaSb MOS system with high-κ PEALD Al2O3 dielectric using admittance spectroscopy and XPS analysis.\",\"PeriodicalId\":396875,\"journal\":{\"name\":\"68th Device Research Conference\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"68th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2010.5551954\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"68th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2010.5551954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fermi level unpinning of GaSb(100) using Plasma Enhanced ALD Al2O3 dielectric
This paper discusses arsenic-antimonide based MOS-HEMTs which have great potential to enable complementary logic operation at low supply voltage. The effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectrics studied in this paper. This paper also proposed for the first time unpinned Fermi level in GaSb MOS system with high-κ PEALD Al2O3 dielectric using admittance spectroscopy and XPS analysis.
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