{"title":"射极指形布局和几何形状对InGaP高温热阻的影响","authors":"E. Yu, D. Hill, L. Zhang, O. Hartin","doi":"10.1109/ROCS.2004.184342","DOIUrl":null,"url":null,"abstract":"As InGaP heterojunction bipolar transistors are becoming widely used for wireless handset power amplifier applications, it is not only in the best interests of device and circuit reliability, but also for devices performance, to optimize thermal management through proper device design. In this work, we report a thermal analysis on multi emitter-finger HBT devices with various emitter finger geometry and layout options. Three techniques, including direct electrical measurement and extraction, high resolution (/spl sim/3 /spl mu/m) infared (IR) thermal imaging, as well as thermal simulation (ANSYS), were employed in the study.","PeriodicalId":437858,"journal":{"name":"JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004.","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The impact of emitter fingers layout and geometry on InGaP HBT thermal resistance\",\"authors\":\"E. Yu, D. Hill, L. Zhang, O. Hartin\",\"doi\":\"10.1109/ROCS.2004.184342\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As InGaP heterojunction bipolar transistors are becoming widely used for wireless handset power amplifier applications, it is not only in the best interests of device and circuit reliability, but also for devices performance, to optimize thermal management through proper device design. In this work, we report a thermal analysis on multi emitter-finger HBT devices with various emitter finger geometry and layout options. Three techniques, including direct electrical measurement and extraction, high resolution (/spl sim/3 /spl mu/m) infared (IR) thermal imaging, as well as thermal simulation (ANSYS), were employed in the study.\",\"PeriodicalId\":437858,\"journal\":{\"name\":\"JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004.\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ROCS.2004.184342\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ROCS.2004.184342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The impact of emitter fingers layout and geometry on InGaP HBT thermal resistance
As InGaP heterojunction bipolar transistors are becoming widely used for wireless handset power amplifier applications, it is not only in the best interests of device and circuit reliability, but also for devices performance, to optimize thermal management through proper device design. In this work, we report a thermal analysis on multi emitter-finger HBT devices with various emitter finger geometry and layout options. Three techniques, including direct electrical measurement and extraction, high resolution (/spl sim/3 /spl mu/m) infared (IR) thermal imaging, as well as thermal simulation (ANSYS), were employed in the study.
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