{"title":"f > 10GHz半导体注入激光器的高速调制","authors":"K. Lau, N. Bar-chaim, I. Ury, A. Yariv","doi":"10.1364/igwo.1984.wb2","DOIUrl":null,"url":null,"abstract":"A fundamental relation between the direct modulation bandwidth of an injection laser and the various laser parameters is as follows: where P0 is the optical power density at the active region, A is the differential gain constant and τ\n p\n is the photon lifetime. It is obvious that the bandwidth can be increased by increasing P\n o\n .","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Speed Modulation of Semiconductor Injection Lasers at f > 10GHz\",\"authors\":\"K. Lau, N. Bar-chaim, I. Ury, A. Yariv\",\"doi\":\"10.1364/igwo.1984.wb2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fundamental relation between the direct modulation bandwidth of an injection laser and the various laser parameters is as follows: where P0 is the optical power density at the active region, A is the differential gain constant and τ\\n p\\n is the photon lifetime. It is obvious that the bandwidth can be increased by increasing P\\n o\\n .\",\"PeriodicalId\":208165,\"journal\":{\"name\":\"Seventh Topical Meeting on Integrated and Guided-Wave Optics\",\"volume\":\"160 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Seventh Topical Meeting on Integrated and Guided-Wave Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/igwo.1984.wb2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/igwo.1984.wb2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Speed Modulation of Semiconductor Injection Lasers at f > 10GHz
A fundamental relation between the direct modulation bandwidth of an injection laser and the various laser parameters is as follows: where P0 is the optical power density at the active region, A is the differential gain constant and τ
p
is the photon lifetime. It is obvious that the bandwidth can be increased by increasing P
o
.