改进的分析型IGBT损耗计算模型,包括结温和杂散电感

Yunyu Tang, Hao Ma
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引用次数: 7

摘要

本文提出了一种适用于IGBT模块的改进分析模型,计算功率损耗精度高,计算时间短。在该模型中,根据几个等效模型,讨论并推导了随结温变化的模块参数,如导通期di/dt和关断期dv/dt。此外,该模型还考虑了电路中的寄生电感,包括功率电路中的发射极和集电极电感以及驱动回路中的栅极电感。基于该模型,给出了集电极电流和集电极-发射极电压的仿真开关波形来验证该模型。同时,通过与实测结果的比较,验证了计算的功率损耗是准确的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An improved analytical IGBT model for loss calculation including junction temperature and stray inductance
An improved analytical model suitable for IGBT modules is proposed in this paper to calculate the power losses with high accuracy and short calculation time. In this model, the parameters varying with junction temperature of the modules, such as di/dt in the turn-on period and dv/dt in the turn-off period, are discussed and derived according to several equivalent models. In addition, the parasitic inductance in the circuit including the emitter and collector inductance in the power circuits and the gate inductance in the driving loop are considered in this model. Based on this proposed model, the simulation switching waveforms of collector currents and collector-emitter voltages are provided to verify the model. Meanwhile, the calculated power losses are confirmed to be precise by comparing with measurement results.
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