晶圆级空间I/sub DDQ/估算方法的比较:NNR与NCR

S. Sabade, D. Walker
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引用次数: 3

摘要

将I/sub DDQ/测试的使用寿命延长到深亚微米技术是近年来人们感兴趣的话题。由于背景电流上升和无故障I/sub DDQ/方差,信噪比降低,I/sub DDQ/测试失去了有效性。使用I/sub DDQ/测试进行缺陷检测需要从缺陷电流中分离出确定的变化源。提出了几种利用晶圆级I/sub DDQ/的确定性变化来估计芯片无故障I/sub DDQ/的方法。本文比较了两种方法:最近邻残差法(NNR)和邻流比法(NCR)。这些方法是用最新技术的工业测试数据进行评估的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparison of wafer-level spatial I/sub DDQ/ estimation methods: NNR versus NCR
Extending the useful life of I/sub DDQ/ test to deep submicron technologies has been a topic of interest in recent years. I/sub DDQ/ test loses its effectiveness as the signal to noise ratio degrades due to rising background current and fault-free I/sub DDQ/ variance. Defect detection using I/sub DDQ/ test requires separation of deterministic sources of variation from defective current. Several methods that use deterministic variation in I/sub DDQ/ at the wafer level for estimating fault-free I/sub DDQ/ of a chip are proposed. This paper compares two such methods: nearest neighbor residual (NNR) and neighbor current ratio (NCR). These methods are evaluated using industrial test data for a recent technology.
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