用于滤波应用的ACPW片上带阻滤波器

A. Shruthi, Bhuvana Nair S, S. Menon
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引用次数: 2

摘要

通信系统的革命性发展导致对低成本、小型化射频微波元件的需求。在射频集成电路(RFIC)中,氧化物层的堆积是制造过程中不可避免的,对设计元件的性能有很大的影响。本文分析了添加栅氧化层对滤波器特性的影响。该滤波器采用带缺陷接地结构(DGS)的非对称共面波导实现。分析了每增加一层滤波器的反射和透射特性,并给出了最佳设计方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ACPW fed onchip band stop filter for filtenna applications
Revolutionary growth in communication systems leads to the need for low cost, miniaturized RF microwave components. In Radio Frequency Integrated Circuit (RFIC), stacking of oxide layers, which is inevitable during the fabrication process, has great effect on the performance of the designed component. In this paper, the effect of incorporating gate oxide layer in filter characteristics is analysed. The filter is realized using Asymmetric coplanar waveguide with Defected Ground Structures (DGS). The reflection and transmission characteristics of the proposed filter are analysed with each additional layers, and the best design is fabricated.
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