氧化锌薄膜忆阻行为的退火时间依赖性

2015 International Symposium on Technology Management and Emerging Technologies (ISTMET) Pub Date : 2015-12-17 DOI:10.1109/ISTMET.2015.7358992

N. Shaari, Shafaq Mardhiyana Mohd Kasim, Nur Sa'adah Muhamad Sauki, S. H. Herman

{"title":"氧化锌薄膜忆阻行为的退火时间依赖性","authors":"N. Shaari, Shafaq Mardhiyana Mohd Kasim, Nur Sa'adah Muhamad Sauki, S. H. Herman","doi":"10.1109/ISTMET.2015.7358992","DOIUrl":null,"url":null,"abstract":"This work focused on the memristive behavior of zinc oxide (ZnO) thin films. ZnO thin films were prepared by sol-gel spin coating technique on the ITO substrate. The deposited thin films were annealed at 300°C in a furnace with variation of annealing time of 30, 60 and 120 minutes. The electrical properties were characterized to obtain the pinched hysteresis loop graph to calculate its Roff/Ron ratio. The sample annealed for 60 minutes has the best switching behavior with highest Roff/Ron ratio of 1.744. The sample also exists in amorphous form as characterized by the X-ray diffraction spectra measurement.","PeriodicalId":302732,"journal":{"name":"2015 International Symposium on Technology Management and Emerging Technologies (ISTMET)","volume":"29 12","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Annealing time dependence of zinc oxide thin films memristive behavior\",\"authors\":\"N. Shaari, Shafaq Mardhiyana Mohd Kasim, Nur Sa'adah Muhamad Sauki, S. H. Herman\",\"doi\":\"10.1109/ISTMET.2015.7358992\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work focused on the memristive behavior of zinc oxide (ZnO) thin films. ZnO thin films were prepared by sol-gel spin coating technique on the ITO substrate. The deposited thin films were annealed at 300°C in a furnace with variation of annealing time of 30, 60 and 120 minutes. The electrical properties were characterized to obtain the pinched hysteresis loop graph to calculate its Roff/Ron ratio. The sample annealed for 60 minutes has the best switching behavior with highest Roff/Ron ratio of 1.744. The sample also exists in amorphous form as characterized by the X-ray diffraction spectra measurement.\",\"PeriodicalId\":302732,\"journal\":{\"name\":\"2015 International Symposium on Technology Management and Emerging Technologies (ISTMET)\",\"volume\":\"29 12\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Symposium on Technology Management and Emerging Technologies (ISTMET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTMET.2015.7358992\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Technology Management and Emerging Technologies (ISTMET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTMET.2015.7358992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文主要研究氧化锌(ZnO)薄膜的忆阻行为。采用溶胶-凝胶自旋镀膜技术在ITO衬底上制备了ZnO薄膜。将沉积的薄膜在300℃的炉内退火，退火时间分别为30、60和120分钟。对其电学特性进行表征，得到缩紧磁滞回线图，计算其Roff/Ron比。退火60分钟的样品开关性能最好，Roff/Ron比最高，为1.744。经x射线衍射光谱测定，样品以无定形存在。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Annealing time dependence of zinc oxide thin films memristive behavior

This work focused on the memristive behavior of zinc oxide (ZnO) thin films. ZnO thin films were prepared by sol-gel spin coating technique on the ITO substrate. The deposited thin films were annealed at 300°C in a furnace with variation of annealing time of 30, 60 and 120 minutes. The electrical properties were characterized to obtain the pinched hysteresis loop graph to calculate its Roff/Ron ratio. The sample annealed for 60 minutes has the best switching behavior with highest Roff/Ron ratio of 1.744. The sample also exists in amorphous form as characterized by the X-ray diffraction spectra measurement.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 International Symposium on Technology Management and Emerging Technologies (ISTMET)

自引率

0.00%

发文量