沟槽场板LDMOS器件总SOA的数值研究

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604555

S. Poli, S. Reggiani, G. Baccarani, E. Gnani, A. Gnudi, M. Denison, S. Pendharkar, R. Wise

{"title":"沟槽场板LDMOS器件总SOA的数值研究","authors":"S. Poli, S. Reggiani, G. Baccarani, E. Gnani, A. Gnudi, M. Denison, S. Pendharkar, R. Wise","doi":"10.1109/SISPAD.2010.5604555","DOIUrl":null,"url":null,"abstract":"A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific on-resistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safe-operating area (SOA), hot-carrier stress (HCS) reliability, self-heating effects (SHE) and thermal SOA.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"13 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Numerical investigation of the total SOA of trench field-plate LDMOS devices\",\"authors\":\"S. Poli, S. Reggiani, G. Baccarani, E. Gnani, A. Gnudi, M. Denison, S. Pendharkar, R. Wise\",\"doi\":\"10.1109/SISPAD.2010.5604555\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific on-resistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safe-operating area (SOA), hot-carrier stress (HCS) reliability, self-heating effects (SHE) and thermal SOA.\",\"PeriodicalId\":331098,\"journal\":{\"name\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"13 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2010.5604555\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2010.5604555","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

对横向沟槽场板(TFP) LDMOS的电学和热学特性进行了数值研究。除了在特定导通电阻(RSP)与击穿电压(VBD)权衡方面的优势(通过适当优化几何和掺杂参数实现)之外，本文还讨论了深沟槽的使用，并特别关注它们对电气安全操作区域(SOA)、热载流子应力(HCS)可靠性、自热效应(SHE)和热SOA的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Numerical investigation of the total SOA of trench field-plate LDMOS devices

A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific on-resistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safe-operating area (SOA), hot-carrier stress (HCS) reliability, self-heating effects (SHE) and thermal SOA.

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2010 International Conference on Simulation of Semiconductor Processes and Devices

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