{"title":"伽马辐射探测用金属氧化物薄膜/结构","authors":"A. Omar, A. Baraka, A. Zaki, K. Sharshar","doi":"10.1109/ICECS.2015.7440409","DOIUrl":null,"url":null,"abstract":"In this work, aluminum oxide, nickel oxide films were prepared for the purpose of gamma radiation dosimetry using several deposition techniques. A significant change in the (I-V) measurements for the as deposited films, p-n junction film structures have been observed upon exposure to high and low gamma radiation doses which proofs the promising characteristics of these oxide films for gamma radiation dosimetry applications.","PeriodicalId":215448,"journal":{"name":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Metal oxide films/structures for gamma radiation detection\",\"authors\":\"A. Omar, A. Baraka, A. Zaki, K. Sharshar\",\"doi\":\"10.1109/ICECS.2015.7440409\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, aluminum oxide, nickel oxide films were prepared for the purpose of gamma radiation dosimetry using several deposition techniques. A significant change in the (I-V) measurements for the as deposited films, p-n junction film structures have been observed upon exposure to high and low gamma radiation doses which proofs the promising characteristics of these oxide films for gamma radiation dosimetry applications.\",\"PeriodicalId\":215448,\"journal\":{\"name\":\"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2015.7440409\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2015.7440409","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Metal oxide films/structures for gamma radiation detection
In this work, aluminum oxide, nickel oxide films were prepared for the purpose of gamma radiation dosimetry using several deposition techniques. A significant change in the (I-V) measurements for the as deposited films, p-n junction film structures have been observed upon exposure to high and low gamma radiation doses which proofs the promising characteristics of these oxide films for gamma radiation dosimetry applications.