{"title":"微波发电采用双势垒谐振隧道二极管","authors":"T. Tebeanu, D. Neculoiu","doi":"10.1109/SMICND.1996.557333","DOIUrl":null,"url":null,"abstract":"This paper investigates microwave power generation using DBRT diodes. An oscillator circuit is analyzed. Expressions for large-signal conductance, output power and maximum power are derived. The power generation of an unbiased pumped diode is analyzed. Based on a simple model, it is demonstrated that in certain conditions the DBRT diode generates power on the 3/sup rd/ harmonic of pump generator.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Microwave power generation using double barrier resonant tunnel diodes\",\"authors\":\"T. Tebeanu, D. Neculoiu\",\"doi\":\"10.1109/SMICND.1996.557333\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates microwave power generation using DBRT diodes. An oscillator circuit is analyzed. Expressions for large-signal conductance, output power and maximum power are derived. The power generation of an unbiased pumped diode is analyzed. Based on a simple model, it is demonstrated that in certain conditions the DBRT diode generates power on the 3/sup rd/ harmonic of pump generator.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557333\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557333","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microwave power generation using double barrier resonant tunnel diodes
This paper investigates microwave power generation using DBRT diodes. An oscillator circuit is analyzed. Expressions for large-signal conductance, output power and maximum power are derived. The power generation of an unbiased pumped diode is analyzed. Based on a simple model, it is demonstrated that in certain conditions the DBRT diode generates power on the 3/sup rd/ harmonic of pump generator.
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