FDSOI技术中低压环形振荡器的体偏和rtn诱发频移分析

2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS) Pub Date : 2018-07-01 DOI:10.1109/PATMOS.2018.8464145

E. Barajas, X. Aragonès, D. Mateo, F. Moll, A. Rubio, J. Martín-Martínez, R. Rodríguez, M. Porti, M. Nafría, R. Castro-López, E. Roca, F. Fernández

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引用次数: 0

摘要

在超低电压(500毫伏及以下)下供电的电子电路是理想的，因为它们的低能量和功耗。然而，RTN(随机电报噪声)引起的阈值电压变化在这样的电源电压下变得非常显著。本文评估了RTN对环形振荡器附加抖动的影响。由于FDSOI允许大范围的体偏置电压，本工作研究体偏置如何影响振荡频率以及抖动效应。评估了NMOS和PMOS器件中RTN对频率的影响以及RTN引入的补充抖动水平，并与经典器件噪声进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology

Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant at such supply voltages. This paper evaluates the impact of RTN on additional jitter in a ring oscillator. Since FDSOI allows a large range of body bias voltages, this work studies how body biasing affects the oscillation frequency but also the jitter effects. The impact of RTN in NMOS and PMOS devices on frequency as well as the levels of supplementary jitter introduced by RTN are evaluated and compared with classical device noise.

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2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)

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