MOS双极栅极IGBT操作

M.D. Bobde, T. Minato, N. Thapar, B. J. Baliga
{"title":"MOS双极栅极IGBT操作","authors":"M.D. Bobde, T. Minato, N. Thapar, B. J. Baliga","doi":"10.1109/ISPSD.1999.764092","DOIUrl":null,"url":null,"abstract":"A new IGBT with a P/sup +/ diverter which is connected to the gate through a series resistance, is proposed in this paper. It was observed from simulations that providing a small current through the diverter resulted in a significant decrease in the device on-state voltage drop. Measurements on fabricated 4 kV IGBTs showed a forward voltage drop of 2.78 V (at collector current density of 100 A/cm/sup 2/) for diverter current of 10 mA (7.38 A/cm/sup 2/), as compared to 3.09 V of the conventional IGBT (without a diverter). After electron irradiation, the devices had a forward voltage drop of 5.02 V (at collector current density of 50 A/cm/sup 2/) for the same diverter current, as compared to 6.48 V for the conventional IGBTs. Furthermore, both the devices had nearly identical turn off time, and excellent latch-up current density.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"MOS bipolar gate IGBT operation\",\"authors\":\"M.D. Bobde, T. Minato, N. Thapar, B. J. Baliga\",\"doi\":\"10.1109/ISPSD.1999.764092\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new IGBT with a P/sup +/ diverter which is connected to the gate through a series resistance, is proposed in this paper. It was observed from simulations that providing a small current through the diverter resulted in a significant decrease in the device on-state voltage drop. Measurements on fabricated 4 kV IGBTs showed a forward voltage drop of 2.78 V (at collector current density of 100 A/cm/sup 2/) for diverter current of 10 mA (7.38 A/cm/sup 2/), as compared to 3.09 V of the conventional IGBT (without a diverter). After electron irradiation, the devices had a forward voltage drop of 5.02 V (at collector current density of 50 A/cm/sup 2/) for the same diverter current, as compared to 6.48 V for the conventional IGBTs. Furthermore, both the devices had nearly identical turn off time, and excellent latch-up current density.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764092\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文提出了一种新型的带P/sup +/分流器的IGBT,该IGBT通过串联电阻与栅极相连。从模拟中观察到,通过分流器提供小电流导致器件导通状态电压降显著降低。对制造的4 kV IGBT的测量显示,当分流电流为10 mA (7.38 a /cm/sup 2/)时,正向电压降为2.78 V(集电极电流密度为100 a /cm/sup 2/),而传统IGBT(不带分流器)的正向电压降为3.09 V。经过电子辐照后,在相同的分流电流下,器件的正向电压降为5.02 V(集电极电流密度为50 a /cm/sup 2/),而传统igbt的正向电压降为6.48 V。此外,这两种器件具有几乎相同的关断时间和出色的锁存电流密度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
MOS bipolar gate IGBT operation
A new IGBT with a P/sup +/ diverter which is connected to the gate through a series resistance, is proposed in this paper. It was observed from simulations that providing a small current through the diverter resulted in a significant decrease in the device on-state voltage drop. Measurements on fabricated 4 kV IGBTs showed a forward voltage drop of 2.78 V (at collector current density of 100 A/cm/sup 2/) for diverter current of 10 mA (7.38 A/cm/sup 2/), as compared to 3.09 V of the conventional IGBT (without a diverter). After electron irradiation, the devices had a forward voltage drop of 5.02 V (at collector current density of 50 A/cm/sup 2/) for the same diverter current, as compared to 6.48 V for the conventional IGBTs. Furthermore, both the devices had nearly identical turn off time, and excellent latch-up current density.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信