{"title":"用极紫外光刻继续摩尔定律","authors":"B. Turkot, S. Carson, A. Lio","doi":"10.1109/IEDM.2017.8268390","DOIUrl":null,"url":null,"abstract":"Extreme Ultra-Violet (EUV) lithography, with its exposure wavelength of 13.5nm, offers a compelling alternative to 193nm-immersion lithography, improving imaging resolution and reducing a key contribution to Edge Placement Error (EPE). Recently, significant progress has been made in the development of EUV exposure tools, with source power meeting the roadmap target for EUV insertion1 as well as demonstrating improvements in system availability and infrastructure such as mask blank defectivity, pellicle membrane manufacturing, and EUV photoresist materials. This paper reviews the current status and challenges of EUV lithography for High Volume Manufacturing (HVM).","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Continuing Moore's law with EUV lithography\",\"authors\":\"B. Turkot, S. Carson, A. Lio\",\"doi\":\"10.1109/IEDM.2017.8268390\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Extreme Ultra-Violet (EUV) lithography, with its exposure wavelength of 13.5nm, offers a compelling alternative to 193nm-immersion lithography, improving imaging resolution and reducing a key contribution to Edge Placement Error (EPE). Recently, significant progress has been made in the development of EUV exposure tools, with source power meeting the roadmap target for EUV insertion1 as well as demonstrating improvements in system availability and infrastructure such as mask blank defectivity, pellicle membrane manufacturing, and EUV photoresist materials. This paper reviews the current status and challenges of EUV lithography for High Volume Manufacturing (HVM).\",\"PeriodicalId\":412333,\"journal\":{\"name\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2017.8268390\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2017.8268390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Extreme Ultra-Violet (EUV) lithography, with its exposure wavelength of 13.5nm, offers a compelling alternative to 193nm-immersion lithography, improving imaging resolution and reducing a key contribution to Edge Placement Error (EPE). Recently, significant progress has been made in the development of EUV exposure tools, with source power meeting the roadmap target for EUV insertion1 as well as demonstrating improvements in system availability and infrastructure such as mask blank defectivity, pellicle membrane manufacturing, and EUV photoresist materials. This paper reviews the current status and challenges of EUV lithography for High Volume Manufacturing (HVM).
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
