{"title":"433 MHz 54µW OOK/FSK/PSK兼容唤醒接收器,11µW低功耗模式,基于注入锁定振荡器","authors":"Shih-En Chen, Kuang-Wei Cheng","doi":"10.1109/ESSCIRC.2016.7598261","DOIUrl":null,"url":null,"abstract":"A 433 MHz 54 μW wake-up receiver that supports OOK/FSK/PSK demodulation schemes is proposed. Injection-locking and superregenerative reception provide the capabilities of demodulation and linear amplifications with superior sensitivity and high energy efficiency. For a data rate of 200 kbps and a BER <; 0.1%, the proposed receiver achieves sensitivity of - 80/-78/-77 dBm under OOK/FSK/PSK schemes, respectively. Further, incorporating a loop antenna with a reception of an injection-locked oscillator, the receiver features a low-power mode of 11 μW with an energy efficiency of 55 pJ/bit. A prototype receiver is fabricated in a 0.18-μm CMOS process with an active area of 0.45 mm2.","PeriodicalId":246471,"journal":{"name":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 433 MHz 54 µW OOK/FSK/PSK compatible wake-up receiver with 11 µW low-power mode based on injection-locked oscillator\",\"authors\":\"Shih-En Chen, Kuang-Wei Cheng\",\"doi\":\"10.1109/ESSCIRC.2016.7598261\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 433 MHz 54 μW wake-up receiver that supports OOK/FSK/PSK demodulation schemes is proposed. Injection-locking and superregenerative reception provide the capabilities of demodulation and linear amplifications with superior sensitivity and high energy efficiency. For a data rate of 200 kbps and a BER <; 0.1%, the proposed receiver achieves sensitivity of - 80/-78/-77 dBm under OOK/FSK/PSK schemes, respectively. Further, incorporating a loop antenna with a reception of an injection-locked oscillator, the receiver features a low-power mode of 11 μW with an energy efficiency of 55 pJ/bit. A prototype receiver is fabricated in a 0.18-μm CMOS process with an active area of 0.45 mm2.\",\"PeriodicalId\":246471,\"journal\":{\"name\":\"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2016.7598261\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2016.7598261","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 433 MHz 54 µW OOK/FSK/PSK compatible wake-up receiver with 11 µW low-power mode based on injection-locked oscillator
A 433 MHz 54 μW wake-up receiver that supports OOK/FSK/PSK demodulation schemes is proposed. Injection-locking and superregenerative reception provide the capabilities of demodulation and linear amplifications with superior sensitivity and high energy efficiency. For a data rate of 200 kbps and a BER <; 0.1%, the proposed receiver achieves sensitivity of - 80/-78/-77 dBm under OOK/FSK/PSK schemes, respectively. Further, incorporating a loop antenna with a reception of an injection-locked oscillator, the receiver features a low-power mode of 11 μW with an energy efficiency of 55 pJ/bit. A prototype receiver is fabricated in a 0.18-μm CMOS process with an active area of 0.45 mm2.