氧化钒纳米发射体在空气中优异的场发射性能

2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-25 DOI:10.1109/NANO.2017.8117269

Meng Liu, W. Fu, Tie Li, Yuelin Wang

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引用次数: 2

摘要

采用聚焦离子束刻蚀法制备了阴极与阳极间隙为10nm的VO2 (A)发射体。该材料在大气条件下具有优异的场发射性能，导通电压低至0.6 V，且在30分钟内具有良好的发射稳定性。这项工作为消除场发射器件对真空的需求提供了一种实用的方法，并在未来的纳米场发射器件如真空场发射晶体管中具有潜在的应用前景。

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Excellent field emission properties of vanadium oxide nanoemitters in air

VO2 (A) emitters with 10 nm gap between the cathode and anode were fabricated with the aid of focus ion beam etching. Excellent field emission properties were achieved under atmospheric conditions with turn-on voltage as low as 0.6 V and good emission stability over 30 minutes. This work provides a practical way to eliminate the vacuum needs of the field emission devices and has potential use in future nanoscale field emission devices such as vacuum field emission transistors.

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2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)

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