从太阳能电池性能测定重掺杂n型GaAs和n型GaInP的带隙缩小

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356553

M. Ghannam, A. Al Omar, G. Flamand, N. Posthuma, J. Poortmans, R. Mertens

{"title":"从太阳能电池性能测定重掺杂n型GaAs和n型GaInP的带隙缩小","authors":"M. Ghannam, A. Al Omar, G. Flamand, N. Posthuma, J. Poortmans, R. Mertens","doi":"10.1109/ESSDER.2004.1356553","DOIUrl":null,"url":null,"abstract":"Band-gap narrowing (BGN) is determined in heavily doped n-type GaAs and n-type Ga/sub 0.5/In/sub 0.5/P from experimental pn junction solar cell performance. A BGN of 82 meV and of 17 meV is determined in GaAs with an n-type doping concentration of 2/spl times/10/sup 18//cm/sup 3/ and 10/sup 17//cm/sup 3/, respectively, and an average 95 meV BGN is determined in Ga/sub 0.5/In/sub 0.5/P with an n-type doping concentration of 3/spl times/10/sup 18//cm/sup 3/. These values agree well with theoretical predictions of a recent model applied to n-type GaAs and adapted here for Ga/sub 0.5/In/sub 0.5/P.","PeriodicalId":287103,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","volume":"17 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Determination of band-gap narrowing in heavily doped n-type GaAs and n-type GaInP from solar cell performance\",\"authors\":\"M. Ghannam, A. Al Omar, G. Flamand, N. Posthuma, J. Poortmans, R. Mertens\",\"doi\":\"10.1109/ESSDER.2004.1356553\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Band-gap narrowing (BGN) is determined in heavily doped n-type GaAs and n-type Ga/sub 0.5/In/sub 0.5/P from experimental pn junction solar cell performance. A BGN of 82 meV and of 17 meV is determined in GaAs with an n-type doping concentration of 2/spl times/10/sup 18//cm/sup 3/ and 10/sup 17//cm/sup 3/, respectively, and an average 95 meV BGN is determined in Ga/sub 0.5/In/sub 0.5/P with an n-type doping concentration of 3/spl times/10/sup 18//cm/sup 3/. These values agree well with theoretical predictions of a recent model applied to n-type GaAs and adapted here for Ga/sub 0.5/In/sub 0.5/P.\",\"PeriodicalId\":287103,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)\",\"volume\":\"17 6\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDER.2004.1356553\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDER.2004.1356553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

通过实验pn结太阳能电池性能测定了重掺杂n型GaAs和n型Ga/sub 0.5/ in /sub 0.5/P的带隙缩小(BGN)。在n型掺杂浓度为2/spl倍/10/sup 18//cm/sup 3/和10/sup 17//cm/sup 3/的GaAs中，测得的BGN分别为82 meV和17 meV;在n型掺杂浓度为3/spl倍/10/sup 18//cm/sup 3/的Ga/sub 0.5/ in /sub 0.5/P中，测得的BGN平均为95 meV。这些值与最近应用于n型GaAs的模型的理论预测一致，并适用于Ga/sub 0.5/In/sub 0.5/P。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Determination of band-gap narrowing in heavily doped n-type GaAs and n-type GaInP from solar cell performance

Band-gap narrowing (BGN) is determined in heavily doped n-type GaAs and n-type Ga/sub 0.5/In/sub 0.5/P from experimental pn junction solar cell performance. A BGN of 82 meV and of 17 meV is determined in GaAs with an n-type doping concentration of 2/spl times/10/sup 18//cm/sup 3/ and 10/sup 17//cm/sup 3/, respectively, and an average 95 meV BGN is determined in Ga/sub 0.5/In/sub 0.5/P with an n-type doping concentration of 3/spl times/10/sup 18//cm/sup 3/. These values agree well with theoretical predictions of a recent model applied to n-type GaAs and adapted here for Ga/sub 0.5/In/sub 0.5/P.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

自引率

0.00%

发文量