通道掺杂对低功耗finfet器件和NBTI性能的影响

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839654

A. Sachid, C. Hu

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引用次数: 1

摘要

我们介绍了不同通道掺杂p- finet的数字、模拟和NBTI参数的器件级表征。我们证明了使用通道掺杂可以权衡器件和NBTI的性能。在p- finfet中，砷掺杂通道具有较好的数字和模拟性能，硼掺杂通道具有较好的NBTI性能。正向体偏置降低了p- finet的NBTI退化。

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Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

We present device-level characterization of digital, analog and NBTI parameters for p-FinFETs with different channel doping. We show that using channel doping we can trade-off device and NBTI performance. In p-FinFETs, Arsenic doped channel has better digital and analog performance and Boron doped channel has superior NBTI performance. Forward body bias reduces NBTI degradation in p-FinFETs.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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