在90纳米SOI/Cu技术中提取高达20 GHz的频率相关特征传输线参数

Electrical Performance of Electronic Packaging - 2004 Pub Date : 2004-10-25 DOI:10.1109/EPEP.2004.1407565

T. Winkel, M.F. Ktata, T. Ludwig, H. Grabinski, E. Klink

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引用次数: 3

摘要

在嵌入8铜金属层测试芯片的专用测试线上进行s参数测量，以确定传播常数y(f)和复杂特性阻抗Z/sub 0/(f)。给出了7/sup / metal层中信号线的测量结果，结果与20 GHz频率范围内的fem模拟结果非常吻合。

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Extraction of frequency dependent characteristic transmission line parameters up to 20 GHz for global wiring in 90 nm SOI/Cu technology

S-parameter measurements were performed on special test lines embedded in an 8 copper metal layer test chip in order to determine the propagation constant y(f) and the complex characteristic impedance Z/sub 0/(f). Measurement results are presented for signal lines in the 7/sup th/ metal layer showing very good agreement with FEM-simulations in the frequency range up to 20 GHz.

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Electrical Performance of Electronic Packaging - 2004

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