{"title":"双栅隧道场效应管超阈区漏极电流解析模型","authors":"Joy Chowdhury, A. Sarkar, K. Mahapatra, J. Das","doi":"10.1109/VLSIDCS47293.2020.9179867","DOIUrl":null,"url":null,"abstract":"To support miniaturization and low power demands of the electronic systems market, the essential scaling laws are marred due to performance degradation by Short Channel Effects. The recently developed TFETs follow interband tunneling (BTBT) as their current injection mechanism and have better subthreshold swing (below 60mV/dec) compared to the conventional SOI MOSFETs. This article presents an analytical model for drain current in the super threshold region. The parabolic potential approach is used including the effect of fringing fields and mobile charges in the channel. This model predicts the surface potential, electric field and BTBT current with reasonable accuracy, thus reflecting most of the physical device phenomena.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analytical Drain Current Model for Super-Threshold Region of Double Gate Tunnel FET\",\"authors\":\"Joy Chowdhury, A. Sarkar, K. Mahapatra, J. Das\",\"doi\":\"10.1109/VLSIDCS47293.2020.9179867\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To support miniaturization and low power demands of the electronic systems market, the essential scaling laws are marred due to performance degradation by Short Channel Effects. The recently developed TFETs follow interband tunneling (BTBT) as their current injection mechanism and have better subthreshold swing (below 60mV/dec) compared to the conventional SOI MOSFETs. This article presents an analytical model for drain current in the super threshold region. The parabolic potential approach is used including the effect of fringing fields and mobile charges in the channel. This model predicts the surface potential, electric field and BTBT current with reasonable accuracy, thus reflecting most of the physical device phenomena.\",\"PeriodicalId\":446218,\"journal\":{\"name\":\"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIDCS47293.2020.9179867\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIDCS47293.2020.9179867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analytical Drain Current Model for Super-Threshold Region of Double Gate Tunnel FET
To support miniaturization and low power demands of the electronic systems market, the essential scaling laws are marred due to performance degradation by Short Channel Effects. The recently developed TFETs follow interband tunneling (BTBT) as their current injection mechanism and have better subthreshold swing (below 60mV/dec) compared to the conventional SOI MOSFETs. This article presents an analytical model for drain current in the super threshold region. The parabolic potential approach is used including the effect of fringing fields and mobile charges in the channel. This model predicts the surface potential, electric field and BTBT current with reasonable accuracy, thus reflecting most of the physical device phenomena.
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